Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection
Jian‐Hsing Lee, Yeh-Jen Huang, Li-Yang Hong, Li-Fan Chen, Yeh-Ning Jou, Shin-Cheng Lin, W. Wohlmuth, Chih-Cherng Liao, Ching‐Ho Li, Shoa-Chang Huang, Ke‐Horng Chen
Abstract
In this paper, a simple circuit is incorporated in a 650V E-mode GaN HEMT process technology to protect all terminals against ESD stress from any direction. Even in the worst case, with the gate subjected to negative ESD pulse with respect to grounded drain, the 650V E-mode HEMT can still pass 5kV HBM.
Topics & Concepts
High-electron-mobility transistorElectrostatic dischargeMode (computer interface)Electrical engineeringSimple (philosophy)Pulse (music)Terminal (telecommunication)Materials scienceElectronic engineeringOptoelectronicsComputer scienceEngineeringTransistorVoltageTelecommunicationsPhilosophyEpistemologyOperating systemGaN-based semiconductor devices and materialsElectrostatic Discharge in ElectronicsSemiconductor materials and devices