Litcius/Paper detail

A physics-based drain current model for Si1-xGex source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement

Anchal Thakur, Rohit Dhiman

2022Microelectronics Journal14 citationsDOI

Topics & Concepts

TransconductanceMaterials scienceOptoelectronicsReliability (semiconductor)Quantum tunnellingTransistorElectrical engineeringElectronic engineeringEngineeringPhysicsVoltagePower (physics)Quantum mechanicsAdvancements in Semiconductor Devices and Circuit DesignSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices
A physics-based drain current model for Si1-xGex source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement | Litcius