New model of crack propagation of aluminium wire bonds in IGBT power modules under low temperature variations
Ayda Halouani, Zoubir Khatir, R. Lallemand, Ali Ibrahim, M. Ouhab
Topics & Concepts
Insulated-gate bipolar transistorPower cyclingJunction temperatureAluminiumMaterials scienceWire bondingPower (physics)VoltageTransient (computer programming)Structural engineeringComposite materialChipElectrical engineeringEngineeringReliability (semiconductor)Computer scienceThermodynamicsPhysicsOperating systemSilicon Carbide Semiconductor TechnologiesElectrostatic Discharge in ElectronicsElectromagnetic Compatibility and Noise Suppression