A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor
Wangze Ni, Zhen Dong, Bairun Huang, Yichi Zhang, Zhuojun Chen
Abstract
In this paper, a compact model for the double-gate Reconfigurable Field-Effect Transistor (RFET) is presented. Firstly, the physics-based surface potential model is derived by solving Poisson's equation at different channel regions. Then an explicit expression of drain current is analytically obtained based on the theory of band-to-band tunneling at the Schottky junction. The proposed model shows excellent agreement with TCAD simulations which have been calibrated with experimental data. Finally, the compactible model is implemented in Verilog-A language without convergence problem, and proven by the RFET-based logic circuit.
Topics & Concepts
Convergence (economics)TransistorComputer sciencePoisson's equationElectronic engineeringField-effect transistorField (mathematics)Channel (broadcasting)Topology (electrical circuits)PhysicsElectrical engineeringMathematicsQuantum mechanicsEngineeringVoltageTelecommunicationsPure mathematicsEconomicsEconomic growthAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesSemiconductor Quantum Structures and Devices