The stress state in bismuth to 298 GPa and its use as a pressure transmitting medium and pressure marker at multi-megabar pressures
C. V. Storm, J. McHardy, M. J. Duff, Simon G. MacLeod, Earl F. O’Bannon, M. I. McMahon
Abstract
We have conducted diffraction studies of bismuth (Bi) to 298 GPa using both conventional and toroidal diamond anvil cells (DACs) to investigate its suitability as a pressure-transmitting medium (PTM) to such pressures. Using microfocused x-ray beams, we have determined the pressure dependence of the uniaxial stress component (t) in cubic Bi-V from 7 to 298 GPa and find that at 298 GPa, t<0.5 GPa. Bi-V, therefore, cannot support significant shear stresses, making it an excellent PTM. We have also measured the compressibility of Bi-V against that of copper (Cu) and gold (Au), allowing it to be used as a pressure marker as well as a PTM.
Topics & Concepts
BismuthDiamond anvil cellCompressibilityDiffractionShear stressMaterials scienceDiamondStress (linguistics)CopperEquation of stateToroidShear (geology)ThermodynamicsComposite materialAnalytical Chemistry (journal)ChemistryMetallurgyOpticsPhysicsPlasmaLinguisticsChromatographyPhilosophyQuantum mechanicsHigh-pressure geophysics and materialsForce Microscopy Techniques and ApplicationsDiamond and Carbon-based Materials Research