Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles
Chandreswar Mahata, Hassan Algadi, Muhammad Ismail, Daewoong Kwon, Sungjun Kim
Topics & Concepts
Materials scienceResistive random-access memoryOptoelectronicsX-ray photoelectron spectroscopyAtomic layer depositionNanotechnologyMemristorThin filmChemical engineeringVoltageElectronic engineeringElectrical engineeringEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering