The unique properties of SiCN as bonding material for hybrid bonding
Serena Iacovo, Soon-Wook Kim, Fuya Nagano, Lan Peng, Fumihiro Inoue, Alain Phommahaxay, Eric Beyne
Abstract
Direct Cu-SiCN hybrid bonding is successfully realized by using a thermal budget of 250 °C. The excellent results should be attributed to the tight control on the different processing steps but also to the properties of the SiCN dielectric used as bonding material.
Topics & Concepts
Materials scienceDielectricThermalHybrid materialComposite materialOptoelectronicsNanotechnologyThermodynamicsPhysicsAdvanced ceramic materials synthesis3D IC and TSV technologiesElectronic Packaging and Soldering Technologies