Gate tunable anomalous Hall effect: Berry curvature probe at oxides interfaces
Mattia Trama, V. Cataudella, C. A. Perroni, Francesco Romeo, R. Citro
Abstract
The characterization and the experimental measurement of the Berry curvature in solids have become an increasingly relevant task in condensed matter physics. We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in a nonmagnetic oxide interface as a hallmark of a nontrivial Berry curvature. The observed AHE at low temperatures in the presence of a planar magnetic field comes from a multiband low-energy model with a generalized Rashba interaction that supports characteristic out-of-plane spin and orbital textures. We also discuss strategies for reconstructing the Berry curvature from the AHE nonlinearities in (111) ${\mathrm{SrTiO}}_{3}$ heterostructure interfaces.