InGaN Resonant Microcavity With n<sup>+</sup>-Porous-GaN/p<sup>+</sup>-GaN Tunneling Junction
Chia‐Feng Lin, Yuting Zhang, Chengjie Wang, Yiyun Chen, Guo-Yi Shiu, Ying-Ke, Jung Han
Abstract
InGaN-based resonant cavity light-emitting diode (RC-LED) structures with top and bottom porous-GaN distributed Bragg reflectors (DBRs) were demonstrated. Epitaxial <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{n}^{+}$ </tex-math></inline-formula> -GaN:Si/n-GaN:Si stack structures were transformed into top/bottom porous-GaN:Si/n-GaN:Si DBRs through a doping-selective electrochemical wet etching process. The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{n}^{+}$ </tex-math></inline-formula> -porous-GaN/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{p}^{+}$ </tex-math></inline-formula> -GaN tunneling junction structure was designed for the current injecting into the InGaN active layer. The line-widths of the electroluminescence spectra were reduced from 23.3 nm at 434.0 nm to 1.9 nm at 434.1 nm due to the resonant microcavity effect.