A four-megabit compute-in-memory macro with eight-bit precision based on CMOS and resistive random-access memory for AI edge devices
Je-Min Hung, Cheng-Xin Xue, Hui-Yao Kao, Yen-Hsiang Huang, Fu-Chun Chang, Sheng-Po Huang, Ta-Wei Liu, Chuan-Jia Jhang, Chin-I Su, Win-San Khwa, Chung‐Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea‐Tiong Tang, Mon‐Shu Ho, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng‐Fan Chang
Topics & Concepts
CMOSComputer scienceResistive random-access memoryMacroMegabitSemiconductor memoryComputer hardwareBinary numberRandom accessNon-volatile memoryMemory cellElectronic engineeringVoltageElectrical engineeringEngineeringTransistorArithmeticComputer networkMathematicsTelecommunicationsProgramming languageAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices