650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology
Yuzhou Wu, Zehong Li, Jia Pan, Chen Chong, Jiuying Yu, Min Ren, Bo Zhang
Abstract
In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are manufactured. It is worth mentioning that generation II is fabricated using 45 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$ {\mu }\text{m}$ </tex-math></inline-formula> ultrathin wafer technology. Due to extra parasitic BJTs, both the thin and ultrathin SJ-IGBT have a larger base amplification factor, that the current density capability exceeds 650 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Compared with thin SJ-IGBT both at 650 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and at room temperature, the on- state voltage of the ultrathin SJ-IGBT could be decreased by about 160 mV, turn-off energy loss could be decreased by 22%. Furthermore, the ultrathin SJ-IGBT maintains a robust short circuit capability of no less than <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10~ {\mu }\text{s}$ </tex-math></inline-formula> under 400 V DC bus voltage.