High-Performance and Linearly Polarized MoTe₂/ReS₂ Heterojunction Phototransistors
R. Ma, Qiuhong Tan, Peizhi Yang, Yingkai Liu, Qianjin Wang
Abstract
Two-dimensional transition metal dichalcogenides have garnered significant research interest due to their excellent photoelectric properties. However, the low photocurrent to dark current ratio has restricted their application in visible light imaging. In this study, we fabricated a high-performance phototransistor using a MoTe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and ReS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> flakes heterojunction to enhance the application potential of phototransistors. The resulting device exhibited a high responsivity of 65.4 A/W, a large current on/off ratio of 43.7, a fast response speed of 480/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$490~\mu $ </tex-math></inline-formula>s, an external quantum efficiency of up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${1}.{38}\times {10} ^{{4}}$ </tex-math></inline-formula> %, specific detectivity reaching up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${6}.{25}\times {10} ^{{12}}$ </tex-math></inline-formula> Jones, a subthreshold swing as low as 125 mV/dec, and carrier mobility up to 319 cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>/V<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot $ </tex-math></inline-formula>s. Notably, the photodetector based on this heterojunction demonstrates visible light imaging functionality. Our work paves the way for developing high-performance phototransistors.