High-performance molybdenum disulfide transistors with channel and contact lengths below 35 nm
Najam U Sakib, Chen Chen, Lei Ding, Yang Yang, Joan M. Redwing, Saptarshi Das
Topics & Concepts
Materials scienceTransistorMolybdenum disulfideOptoelectronicsMonolayerThreshold voltageDielectricSchottky barrierChemical vapor depositionGate dielectricScalingContact resistanceSiliconBilayerGate oxideNanoelectronicsMOSFETSchottky diodeNanotechnologyOxideField-effect transistorVoltageConductanceLogic gateMolybdenumHigh-κ dielectricThin-film transistorMetal gate2D Materials and ApplicationsOrganic Electronics and PhotovoltaicsNanowire Synthesis and Applications