Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films
M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov, D. A. Normurodov, Z. A. Tursunmetova
Abstract
The formation of films of barium monosilicide BaSi and dicilicide BaSi 2 on an n -Si(100) substrate of different thicknesses d = 8–800 nm during the low-energy high-dose implantation of barium ions in Si(100) and magnetron sputtering of bulk samples of barium silicides is studied by electron spectroscopy and low-energy electron diffraction. The optimal modes of the formation and band-energy parameters of BaSi and BaSi 2 films on n -Si(100) are determined.
Topics & Concepts
BariumMaterials scienceSubstrate (aquarium)SputteringAnalytical Chemistry (journal)Sputter depositionSiliconThin filmOptoelectronicsChemistryMetallurgyNanotechnologyGeologyOceanographyChromatographySemiconductor materials and interfacesChalcogenide Semiconductor Thin FilmsIntermetallics and Advanced Alloy Properties