1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode
Zijun Bian, Katherine J. Rae, Adam F. McKenzie, Ben C. King, Nasser Babazadeh, Guangrui Li, Jonathan R. Orchard, Neil D. Gerrard, Stephen Thoms, Donald A. MacLaren, Richard J. E. Taylor, David Childs, Richard A. Hogg
Abstract
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.
Topics & Concepts
Materials scienceOptoelectronicsEpitaxyLasing thresholdPhotonic crystalLaserSemiconductor laser theoryDiodeLight-emitting diodeGallium arsenideLaser diodePhotonicsCrystal (programming language)Photonic integrated circuitVertical-cavity surface-emitting laserOpticsCrystal growthDistributed Bragg reflector laserSurface (topology)Gain-switchingOptical pumpingWide-bandgap semiconductorOptical materialsPhotonic Crystals and ApplicationsSemiconductor Lasers and Optical DevicesPhotonic and Optical Devices