Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics
Peng Gao, Mengmeng Yang, Chuanglei Wang, Hengyi Li, Baoxiang Yang, Zhaoqiang Zheng, Nengjie Huo, Wei Gao, Dongxiang Luo, Jingbo Li
Abstract
Jones, and response time of 8.6/4.2 ms under 635 nm illumination, respectively. In contrast, benefiting from the stronger in-plane anisotropic structure of thinner SnS component, the device delivers a large photocurrent anisotropic ratio of 4.6 under 635 nm illumination in a zigzag manner. Above all, our work provides a new design scheme for multifunctional optoelectronic applications based on thickness-dependent 2D vdWs heterostructures.
Topics & Concepts
HeterojunctionMaterials scienceOptoelectronicsPhotocurrentResponsivityNanoelectronicsNanosheetAntimonideAnisotropyPhosphorenePolarization (electrochemistry)RectificationChemical vapor depositionBand gapOpticsNanotechnologyPhotodetectorChemistryQuantum mechanicsPhysicsPower (physics)Physical chemistry2D Materials and ApplicationsPerovskite Materials and ApplicationsChalcogenide Semiconductor Thin Films