A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO2 thin films grown by ALD between 100 and 300 °C
Bingbing Xia, Jean‐Jacques Ganem, Emrick Briand, S Steydli, A. Baron-Wiecheć, I. Vickridge
Topics & Concepts
Elastic recoil detectionAtomic layer depositionRutherford backscattering spectrometryNuclear reaction analysisIon beam analysisThin filmImpurityEllipsometryMaterials scienceAnalytical Chemistry (journal)Chemical vapor depositionTitaniumLayer (electronics)HydrogenIon beamChemical engineeringNanotechnologyChemistryIonMetallurgyEngineeringOrganic chemistryChromatographySemiconductor materials and devicesZnO doping and propertiesElectronic and Structural Properties of Oxides