High-performance photodetector based on few-layered 2D MnPSe3
Ping Liu, Yong Pu
Abstract
Recently, van der Waals layered metal phosphochalcogenides with a common formula MPX3 (e.g. M = Fe, Co, Ni, Mn; X = S, Se) have attracted intensive research interest as promising candidates in optoelectronic applications because of their strong light absorption and tunable bandgap. In this paper, we report the synthesis of high-quality MnPSe3 crystals and investigate the performance of photodetector based on two-dimensional (2D) MnPSe3. The fabricated device exhibits a low dark current (0.15 pA) and a high photo-responsivity without gate bias, together with excellent photoswitching stability toward short-wavelength light. Moreover, the photoresponse properties of few-layered MnPSe3 are found to be dependent on the layer thickness, which is mainly attributed to the Schottky barrier. Our work promotes the further development of 2D MPX3 as promising photodetectors with low-power consumption.