Enhancing UV photodetection performance of an individual ZnO microwire p–n homojunction <i>via</i> interfacial engineering
Kai Tang, Mingming Jiang, Bingwang Yang, Tong Xu, Zeng Liu, Peng Wan, Caixia Kan, Daning Shi
Abstract
Jones upon 365 nm light illumination at 0 V. The detector also produces faster response with rise/recovery times of 102 μs/3.6 ms. This study not only employed a novel method to synthesize genuine p-type ZnO with excellent stability and reproducibility, but also opened up substantial opportunities for developing high-performance ZnO homojunction optoelectronic devices.
Topics & Concepts
HomojunctionMaterials scienceResponsivityOptoelectronicsPhotodetectorUltravioletBand gapPhotodetectionSemiconductorDopingZnO doping and propertiesGa2O3 and related materialsGas Sensing Nanomaterials and Sensors