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Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction

V. Manjunath, U. Chalapathi, B. Purusottam Reddy, Chang-Hoi Ahn, Si‐Hyun Park

2023Journal of Materials Science Materials in Electronics10 citationsDOI

Topics & Concepts

Ohmic contactMaterials scienceSchottky barrierX-ray photoelectron spectroscopySchottky diodeAnalytical Chemistry (journal)Semiconductorp–n junctionGallium nitrideOxideReverse leakage currentOptoelectronicsNanotechnologyChemistryDiodeLayer (electronics)Nuclear magnetic resonanceMetallurgyPhysicsChromatographyGa2O3 and related materialsSemiconductor materials and devicesSemiconductor materials and interfaces
Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction | Litcius