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Electrically adjusted deep-ultraviolet/near-infrared single-band/dual-band imaging photodetectors based on Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub>/PdTe<sub>2</sub>/Ge multiheterostructures

Yi Liang, Chao Xie, Cheng-yun Dong, Xiaowei Tong, Wenhua Yang, Chunyan Wu, Lin‐Bao Luo

2021Journal of Materials Chemistry C26 citationsDOI

Abstract

A photodetector composed of a Cs 3 Cu 2 I 5 /PdTe 2 /Ge multiheterostructure presents an excellent electrically adjusted DUV/NIR single band/dual-band photodetecting ability and has the potential for applications in dual-band optical image sensing.

Topics & Concepts

PhotodetectorMaterials scienceInfraredUltravioletMulti-band deviceNear-infrared spectroscopyOptoelectronicsDual (grammatical number)OpticsPhysicsTelecommunicationsAntenna (radio)LiteratureComputer scienceArtPerovskite Materials and Applications2D Materials and ApplicationsGa2O3 and related materials
Electrically adjusted deep-ultraviolet/near-infrared single-band/dual-band imaging photodetectors based on Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub>/PdTe<sub>2</sub>/Ge multiheterostructures | Litcius