A dual-band photodetector based on a mixed-dimensional WSe<sub>2</sub>/GaN junction
Shuting Chen, Hui Wang, Yuqing Yang, Shishi Liu, Lingyu Zhu, Xingfu Wang, Nengjie Huo
Abstract
We have successfully fabricated a WSe 2 /GaN heterojunction with distinct bandgaps and dimensionality, enabling the development of a high-performance visible/ultraviolet dual-band photodetector.
Topics & Concepts
PhotodetectorMaterials scienceHeterojunctionOptoelectronicsUltravioletDual (grammatical number)Curse of dimensionalityWide-bandgap semiconductorp–n junctionSemiconductorComputer scienceLiteratureMachine learningArt2D Materials and ApplicationsGa2O3 and related materialsGaN-based semiconductor devices and materials