Nonvolatile Latch Designs With Node-Upset Tolerance and Recovery Using Magnetic Tunnel Junctions and CMOS
Aibin Yan, Litao Wang, Jie Cui, Zhengfeng Huang, Tianming Ni, Patrick Girard, Xiaoqing Wen
Abstract
As semiconductor technologies scale down, radiative-particle-induced soft errors and static power consumption are becoming major concerns for digital circuits. Magnetic-tunnel-junctions (MTJs) are widely used to address these concerns. MTJs are nonvolatile (NV) and compatible with traditional CMOS processes. In this article, we first propose a double-node-upset (DNU) tolerant and NV latch, i.e., M-TPDICE-V2, providing high reliability. In addition, we further propose an advanced latch, namely, M-8C, that is able to completely recover from single-node upsets (SNUs) and DNUs. M-8C uses a DNU recovery module and a backup and restore module based on a pair of MTJs. Furthermore, we propose a universal backup and restore module suitable for any latch providing nonvolatility. We simulate the proposed latches using the Synopsys HSPICE tool with a 45-nm CMOS process model. Simulation results confirm the superior capabilities of our proposed M-TPDICE-V2 and M-8C latches. M-TPDICE-V2 exhibits strong SNU and DNU tolerance and nonvolatility, while the M-8C latch provides complete DNU recovery capabilities.