Nonvolatile Ferroelectric Field Control of the Anomalous Hall Effect in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Bi</mml:mi><mml:mi>Fe</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>Sr</mml:mi><mml:mi>Ru</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math> Bilayer
Z. Y. Ren, Fei Shao, P.F. Liu, M.X. Wang, J.K. Chen, Kangkang Meng, Xiaoguang Xu, Jun Miao, Yong Jiang
Abstract
Here, the ${\mathrm{Bi}\mathrm{Fe}\mathrm{O}}_{3}/{\mathrm{Sr}\mathrm{Ru}\mathrm{O}}_{3}$ heterostructure is fabricated and the anomalous Hall effect (AHE) is investigated. The nonmonotonic anomalous Hall resistivity behavior in ${\mathrm{Bi}\mathrm{Fe}\mathrm{O}}_{3}/{\mathrm{Sr}\mathrm{Ru}\mathrm{O}}_{3}$ originates from the inhomogeneous ${\mathrm{Sr}\mathrm{Ru}\mathrm{O}}_{3}$ layer instead of the topological Hall effect. It is surprising that the AHE in the ${\mathrm{Bi}\mathrm{Fe}\mathrm{O}}_{3}/{\mathrm{Sr}\mathrm{Ru}\mathrm{O}}_{3}$ structure can be manipulated by switching the ferroelectric polarization of ${\mathrm{Bi}\mathrm{Fe}\mathrm{O}}_{3}$. Furthermore, the modulation of AHE in ${\mathrm{Sr}\mathrm{Ru}\mathrm{O}}_{3}$ under ferroelectric polarization is discussed with respect to first-principles calculations and originates from the change of band structure around the Fermi level. The ferroelectric-manipulated AHE suggests a pathway to realize nonvolatile, reversible, and low-energy-consuming voltage-controlled spintronic devices.