Growth characteristics of Fe-doped GaN epilayers on SiC (001) substrates and their effects on high breakdown voltage devices
Kai-Ping Chang, Po-Jung Lin, Ray-Hua Horng, Dong‐Sing Wuu
Topics & Concepts
Materials scienceDopingOptoelectronicsBreakdown voltageVoltageElectrical engineeringEngineeringGaN-based semiconductor devices and materialsZnO doping and propertiesSilicon Carbide Semiconductor Technologies