Ta<sub>2</sub>Ni<sub>3</sub>Se<sub>8</sub>: 1D van der Waals Material with Ambipolar Behavior
Kyung Hwan Choi, Byung Joo Jeong, Jiho Jeon, You Kyoung Chung, Dongchul Sung, Sang Ok Yoon, Sudong Chae, Bum Jun Kim, Seungbae Oh, Sang Hoon Lee, Chaeheon Woo, Xue Dong, Ghulam Asghar, Ali Junaid, Tae Yeong Kim, Minji Seo, Jae‐Hyun Lee, Joonsuk Huh, Hak Ki Yu, Jae‐Young Choi
Abstract
Abstract In this study, high‐purity and centimeter‐scale bulk Ta 2 Ni 3 Se 8 crystals are obtained by controlling the growth temperature and stoichiometric ratio between tantalum, nickel, and selenium. It is demonstrated that the bulk Ta 2 Ni 3 Se 8 crystals could be effectively exfoliated into a few chain‐scale nanowires through simple mechanical exfoliation and liquid‐phase exfoliation. Also, the calculation of electronic band structures confirms that Ta 2 Ni 3 Se 8 is a semiconducting material with a small bandgap. A field‐effect transistor is successfully fabricated on the mechanically exfoliated Ta 2 Ni 3 Se 8 nanowires. Transport measurements at room temperature reveal that Ta 2 Ni 3 Se 8 nanowires exhibit ambipolar semiconducting behavior with maximum mobilities of 20.3 and 3.52 cm 2 V −1 s −1 for electrons and holes, respectively. The temperature‐dependent transport measurement (from 90 to 295 K) confirms the carrier transport mechanism of Ta 2 Ni 3 Se 8 nanowires. Based on these characteristics, the obtained 1D vdW material is expected to be a potential candidate for additional 1D materials as channel materials.