Low-Thermal-Budget BEOL-Compatible Beyond-Silicon Transistor Technologies for Future Monolithic-3D Compute and Memory Applications
Aaron Thean, Shih-Hao Tsai, Chun-Kuei Chen, Maheswari Sivan, Baoshan Tang, Sonu Hooda, Zihang Fang, Jieming Pan, Jin Feng Leong, Hasita Veluri, Evgeny Zamburg
Abstract
If Si CMOS for massive M3D is difficult due to need for high-thermal-budget processes, are there solutions that are beyond Si? In this article, we discuss two low-thermal-budget approaches: Oxide Semiconductor and 2D Materials for M3D integration. By reviewing some of our recent work with IGZO-based transistors and memories, followed by our investigation of the 2D material opportunities for 3D memories, we highlight the need for new low-thermal-budget additive techniques for heterogenous multi-material integration as well as low-temperature material modification. Given the unlikelihood of “perfect materials”, new system architecture-material-device co-design intervention will be essential to capitalize on the specific trade-offs of the components.