Artificial synaptic simulating pain-perceptual nociceptor and brain-inspired computing based on Au/Bi3.2La0.8Ti3O12/ITO memristor
Hao Chen, Zhihao Shen, Wentao Guo, Yanping Jiang, Wen‐Hua Li, Dan Zhang, Zhenhua Tang, Qijun Sun, Xin‐Gui Tang
Abstract
Recently, memristors have garnered widespread attention as neuromorphic devices that can simulate synaptic behavior, holding promise for future commercial applications in neuromorphic computing. In this paper, we present a memristor with an Au/Bi3.2La0.8Ti3O12 (BLTO)/ITO structure, demonstrating a switching ratio of nearly 103 over a duration of 104 seconds. It successfully simulates a range of synaptic behaviors, including long-term potentiation and depression, paired-pulse facilitation, spike-timing-dependent plasticity, spike-rate-dependent plasticity etc. Interestingly, we also employ it to simulate pain threshold, sensitization, and desensitization behaviors of pain-perceptual nociceptor (PPN). Lastly, by introducing memristor differential pairs (1T1R-1T1R), we train a neural network, effectively simplifying the learning process, reducing training time, and achieving a handwriting digit recognition accuracy of up to 97.19%. Overall, the proposed device holds immense potential in the field of neuromorphic computing, offering possibilities for the next generation of high-performance neuromorphic computing chips.