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ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness

Clint D. Frye, C. E. Reinhardt, Scott Donald, Lars F. Voss, S. E. Harrison

2022Materials Science in Semiconductor Processing16 citationsDOIOpen Access PDF

Topics & Concepts

Materials scienceFacetingSurface roughnessSubstrate (aquarium)Surface finishIsotropic etchingEtching (microfabrication)MicrostructureOptoelectronicsPlasmaEpitaxyPlasma etchingEtch pit densityComposite materialLayer (electronics)CrystallographyChemistryGeologyPhysicsOceanographyQuantum mechanicsGaN-based semiconductor devices and materialsPlasma Diagnostics and ApplicationsSemiconductor materials and devices
ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness | Litcius