A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications
Arijit Karmakar, Jialei Wang, Jeffrey Prinzie, Valentijn De Smedt, Paul Leroux
Abstract
This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (γ-ray, X-ray, high energy UV-ray and heavy ions, etc.) is essential in several critical reliability applications such as medical, aviation, space missions and high energy physics experiments considering safety and quality assurance. In the last few decades, numerous techniques based on semiconductor devices such as diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs) and solid-state photomultipliers (SSPMs), etc., have been reported to estimate the absorbed dose of radiation with sensitivity varying by several orders of magnitude from μGy to MGy. In addition, the mitigation of soft errors in integrated circuits essentially requires detection of charged particle induced transients and digital bit-flips in storage elements. Depending on the particle energies, flux and the application requirements, several sensing solutions such as diodes, static random access memory (SRAM) and NAND flash, etc., are reported in the literature. This article goes through the evolution of radiation dosimeters and particle detectors implemented using semiconductor technologies and summarises the features with emphasis on their underlying principles and applications. In addition, this article performs a comparison of the different methodologies while mentioning their advantages and limitations.