Effect of ALD- and PEALD- Grown Al2O3 Gate Insulators on Electrical and Stability Properties for a-IGZO Thin-Film Transistor
Jungmin Park, Hyojung Kim, Pyungho Choi, Bohyeon Jeon, Jongyoon Lee, Changyong Oh, Bo Sung Kim, Byoungdeog Choi
Topics & Concepts
Materials scienceThin-film transistorAtomic layer depositionOptoelectronicsTransistorThreshold voltageStress (linguistics)Amorphous solidAnalytical Chemistry (journal)PlasmaCapacitanceLayer (electronics)ElectrodeNanotechnologyVoltageElectrical engineeringOrganic chemistryPhysicsEngineeringChemistryPhilosophyPhysical chemistryLinguisticsQuantum mechanicsChromatographyThin-Film Transistor TechnologiesZnO doping and propertiesSemiconductor materials and devices