Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
Kexin Deng, Sen Huang, Xinhua Wang, Qimeng Jiang, Haibo Yin, Jie Fan, Guanjun Jing, Wei Ke, Yingkui Zheng, Jingyuan Shi, Xinyu Liu
Topics & Concepts
Materials scienceX-ray photoelectron spectroscopyThreshold voltageOptoelectronicsTrappingAtomic layer depositionTransistorDielectricGate dielectricSemiconductorAnalytical Chemistry (journal)VoltageThin filmNanotechnologyChemistryElectrical engineeringNuclear magnetic resonanceBiologyEngineeringEcologyChromatographyPhysicsGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials