Fully Depleted MAPS in 110-nm CMOS Process With 100–300-μm Active Substrate
Lucio Pancheri, Raffaele Aaron Giampaolo, Andrea Di Salvo, S. Mattiazzo, Thomas Corradino, P. Giubilato, R. Santoro, M. Caccia, G. Margutti, J. Olave, M. Rolo, Angelo Rivetti
Abstract
This article presents a fully depleted monolithic active pixel sensor technology compatible with a standard deep submicrometer 110-nm CMOS process. Passive test pixels structures, produced in various flavors, have proved the feasibility of 100- and 300-μm-thick active substrates. Active pixel sensors with monolithically integrated analog and digital electronics, consisting of a 24 × 24 array of pixels with 50-μm pitch, have been shown to be fully functional when operating in the full depletion mode. Characterization results obtained with a proton microbeam and a <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">55</sup> Fe radiation source are presented and discussed.