Smallest Stable <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Si</mml:mi><mml:mo>/</mml:mo><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> Interface that Suppresses Quantum Tunneling from Machine-Learning-Based Global Search

Abstract

While the downscaling of size for field effect transistors is highly desirable for computation efficiency, quantum tunneling at the Si/SiO_{2} interface becomes the leading concern when approaching the nanometer scale. By developing a machine-learning-based global search method, we now reveal all the likely Si/SiO_{2} interface structures from thousands of candidates. Two high Miller index Si(210) and (211) interfaces, being only ∼1 nm in periodicity, are found to possess good carrier mobility, low carrier trapping, and low interfacial energy. The results provide the basis for fabricating stepped Si surfaces for next-generation transistors.

Topics & Concepts