In Operando, Photovoltaic, and Microscopic Evaluation of Recombination Centers in Halide Perovskite-Based Solar Cells
Arava Zohar, Michael Kulbak, Silver‐Hamill Turren‐Cruz, Pabitra K. Nayak, Adi Kama, Anders Hagfeldt, Henry J. Snaith, Gary Hodes, David Cahen
Abstract
(Cl). As EBIC photocurrents are similar at the grain bulk and boundaries, we suggest that the defects are at the interfaces with selective contacts rather than in the HaP film. These results are relevant for photovoltaic devices as the EBIC responses distinguish clearly between high- and low-efficiency devices. The most efficient devices have n-i-p structures with a close-to-intrinsic HaP film, and the selective contacts then dictate the electric field strength throughout the HaP absorber.
Topics & Concepts
Materials sciencePerovskite (structure)Electron beam-induced currentOptoelectronicsPhotovoltaicsHalideElectric fieldPhotovoltaic systemRecombinationGrain boundaryCarrier lifetimeDiffusionSolar cellCharge carrierSiliconCrystallographyMicrostructurePhysicsChemistryMetallurgyBiologyThermodynamicsEcologyQuantum mechanicsBiochemistryGeneInorganic chemistryPerovskite Materials and ApplicationsChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And Properties