High vacuum wafer level packaging for uncooled infrared sensor
Mikel Azpeitia Urquia, Giorgio Allegato, Stefano Paleari, Francesco Tripodi, Laura Oggioni, Matteo Garavaglia, Y. Nemirovsky, Tanya Blank
Abstract
High vacuum packaging is a key factor for MEMS based uncooled infrared sensors in order to enhance sensitivity and optimize device performances. In this paper a high vacuum, low cost and reliable wafer-level package (WLP) architecture for a MOS based infrared sensor is presented, based on a double wafer bonding process and a getter layer integration. Vacuum level of the WLP was electrically characterized with positive results, confirming vacuum level value lower than 10 μ bar.
Topics & Concepts
WaferGetterWafer-level packagingMaterials scienceMicroelectromechanical systemsOptoelectronicsInfraredWafer-scale integrationBar (unit)Vacuum levelUltra-high vacuumWafer bondingLayer (electronics)Vacuum packingNanotechnologyOpticsMechanical engineeringEngineeringMeteorologyPhysicsQuantum mechanicsAdvanced MEMS and NEMS Technologies3D IC and TSV technologiesThin-Film Transistor Technologies