C–Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability
Te Bi, Yuhao Chang, Wenxi Fei, Masayuki Iwataki, Aoi Morishita, Yu Fu, Naoya Niikura, Hiroshi Kawarada
Topics & Concepts
DiamondX-ray photoelectron spectroscopyMOSFETMaterials scienceField-effect transistorAtmospheric temperature rangeAnalytical Chemistry (journal)Electron mobilityOptoelectronicsDangling bondTransistorSiliconChemistryElectrical engineeringChemical engineeringComposite materialVoltageEngineeringPhysicsMeteorologyChromatographyDiamond and Carbon-based Materials ResearchElectronic and Structural Properties of OxidesSemiconductor materials and devices