First-Principles Predictions of Janus MoSSe and WSSe for FET Applications
Yu Ding, Guofeng Yang, Yan Gu, Yingzhou Yu, Xiu‐Mei Zhang, Xue Tang, Naiyan Lu, Yueke Wang, Zhicheng Dai, Huiqin Zhao, Yuhang Li
Abstract
Janus transition-metal dichalcogenides (JTMDs) with an asymmetric structure have attracted much attention because of their obvious potential in electronic and optical applications. However, there are few research studies on field-effect transistors (FETs) related to JTMDs, and the inherent device transport performance is unclear so far. In this work, we systematically investigate the ballistic transport performance of sub-10 nm monolayer Janus MoSSe and WSSe metal oxide semiconductor FETs (MOSFETs) based on ab initio quantum transport simulations. The on-state current, delay time, and power dissipation of Janus MoSSe and WSSe MOSFETs with a proper doping concentration under the requirements of high performance (HP) in the International Technology Roadmap for Semiconductor are systematically studied. The calculated results indicate that the on-state currents of MoSSe MOSFETs can satisfy about 35% requirement of HP standards and the WSSe MOSFETs fulfill the HP application targets until the gate length is scaled down to 4 nm. In addition, we discussed the underlying physical mechanisms and further explored the effect of channel material oxidation on the device performance. As a result, it is believed that our predictions could greatly stimulate the potential of Janus MoSSe and WSSe applied to transistors.