Atomic Layer Deposition of Ga<sub>2</sub>O<sub>3</sub>/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory
Xing Li, Jianguo Yang, Hong-Ping Ma, Yuhang Liu, Zhigang Ji, Wei Huang, Xin Ou, David Wei Zhang, Hong-Liang Lü
Abstract
The resistive switching behavior in resistive random access memories (RRAMs) using atomic-layer-deposited Ga 2 O 3 /ZnO composite film as the dielectric was investigated. By alternatively atomic-layer-depositing Ga 2 O 3 and ZnO with different thickness, we can accurately control the oxygen vacancy concentration. When regulating ZnO to ∼31%, the RRAMs exhibit a forming-free property as well as outstanding performance, including the ratio of a high resistance state to the low resistance state of 1000, retention time of more than 1 × 10 4 s, and the endurance of 100. By preparing RRAMs of different Zn concentration, we carried out a comparative study and explored the physical origin for the forming-free property as well as good performance. Finally, a unified model is proposed to account for the resistive switching and the current conduction mechanism, providing meaningful insights in the development of high-quality and forming-free RRAMs for future memory and neuromorphic applications.