Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack
Xiaolei Wang, Xiaoqing Sun, Yuanyuan Zhang, Lixing Zhou, Jinjuan Xiang, Xueli Ma, Hong Yang, Yongliang Li, Kai Han, Jun Luo, Chao Zhao, Wenwu Wang
Abstract
This article theoretically investigates the impact of charges at the ferroelectric/interlayer interface on the depolarization field of ferroelectric FET (FeFET) with metal/ferroelectric/interlayer/Si gate structure. The interfacial charges include fixed charges and trapped/detrapped charges. We find that the positive or negative interfacial charges (~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> ) can align the directions of the depolarization field and corresponding polarization in the ferroelectric. This article may provide insight into the device design of FeFET.