Unconventional Resistive Switching Behavior in Fibroin‐Based Memristor
Ke Chang, Anhua Dong, Xinna Yu, Binbin Liu, Xinhui Zhao, WANG REN-ZHI, Zhikai Gan, Kang’an Jiang, Yiru Niu, Xinyuan Dong, Diyuan Zheng, Yizhen Li, Peng Bao, Zhuyikang Zhao, Hui Wang
Abstract
Abstract Transient memristor, which can be decomposed in water after completing the designed task, has shown great potentials in data security, implantable medical devices, and eco‐friendly electronics. However, the further development of transient memristors is hindered by lacking practical approaches to deal with the dilemma between stability and degradability of the device. Here, using Ag‐doped fibroin film as a switching medium, an unconventional right‐angled‐like resistive switching behavior is observed. Based on this novel resistive switching characteristic, a high‐performance transient memristor is designed and fabricated. A self‐assembled Ag nanoclusters model is proposed to interpret this unique electron‐transport property. The self‐assembled silver nanoclusters can redistribute the charge flux and lower the potential barrier, leading to novel switching characteristics. Furthermore, the device can work at ultralow operating voltages (0.03 V) over 300 cycles with an extremely high memory window of 10 7 . The experimental findings open up a new path to design high‐performance transient memristors for a safe and reliable data storage system.