Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride
Ye Wang, Junhua Meng, Yan Tian, Yanan Chen, Gaokai Wang, Zhigang Yin, Peng Jin, Jingbi You, Jinliang Wu, Xingwang Zhang
Abstract
, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors.
Topics & Concepts
Materials sciencePhotodetectorResponsivityDopingUltravioletOptoelectronicsCrystallinityBoron nitrideBoronSputteringNanotechnologyThin filmComposite materialChemistryOrganic chemistryGa2O3 and related materials2D Materials and ApplicationsGraphene research and applications