Monolayer MoS<sub>2</sub> Steep-slope Transistors with Record-high Sub-60-mV/decade Current Density Using Dirac-source Electron Injection
Maomao Liu, Hemendra Nath Jaiswal, Simran Shahi, Sichen Wei, Yu Fu, Chaoran Chang, Anindita Chakravarty, Fei Yao, Huamin Li
Abstract
Two-dimensional (2D) semiconductors such as MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> are promising material candidates for next-generation energy-efficient nanoelectronics. For the first time, a 2D steep-slope field-effect transistor (FET) based on novel Dirac-source electron injection (DSEI) was demonstrated where monolayer graphene (Gr) source injects cold electrons to monolayer MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> channel. As an innovative steep transistor concept, this atomic-thin 2D DSEI-FET shows the minimum subthreshold swing (SS) of 29 mV/decade and, more importantly, a record-high sub-60-mV/decade current density (over 1 μA/μm) compared to any state-of-the-art 2D or three-dimensional (3D) tunneling FETs (TFETs) or negative capacitance FETs (NCFETs).