Performance evaluation of gate engineered InAs–Si heterojunction surrounding gate TFET
M. Sathishkumar, T. S. Arun Samuel, K. Ramkumar, I. Vivek Anand, Shiromani Bal Mukund Rahi
Topics & Concepts
Materials scienceTunnel field-effect transistorHeterojunctionOptoelectronicsWork functionField-effect transistorElectric fieldTransistorSemiconductorPower (physics)NanotechnologyVoltageElectrical engineeringPhysicsEngineeringLayer (electronics)Quantum mechanicsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesIntegrated Circuits and Semiconductor Failure Analysis