Influence of interfacial energy on the growth of SiC single crystals from high temperature solutions
Guobin Wang, Da Sheng, Hui Li, Zesheng Zhang, Lingling Guo, Zhongnan Guo, Wenxia Yuan, Wenjun Wang, Xiaolong Chen
Abstract
Al addition modifies the interfacial energy of SiC/solution during the growth of SiC single crystals via TSSG, and is beneficial to smoothing the growth surface, improving the crystalline quality, stabilizing the 4H polytype, and increasing the growth rate.
Topics & Concepts
Materials scienceGrowth rateSurface energyCrystal growthChemical engineeringSmoothingEnergy (signal processing)Surface (topology)CrystallographyChemical physicsChemistryComposite materialComputer scienceMathematicsGeometryStatisticsEngineeringComputer visionSilicon Carbide Semiconductor TechnologiesAdvanced ceramic materials synthesisSemiconductor materials and devices