[Zn<sup>2+</sup>–Ge<sup>4+</sup>] co-substitutes [Ga<sup>3+</sup>–Ga<sup>3+</sup>] to coordinately broaden the near-infrared emission of Cr<sup>3+</sup> in Ga<sub>2</sub>O<sub>3</sub> phosphors
Jianhua Lin, Liuyan Zhou, Yuyu Shen, Jie Fu, Yanling Chen, Lei Lei, Renguang Ye, Yang Shen, Degang Deng, Shiqing Xu
Abstract
(GZGOC) phosphor exhibits NIR wide-band emission, with a peak wavelength of 766 nm and a half-width of 138 nm. Meanwhile, the quantum yield of photoluminescence can reach 81.2%. The phosphor has good thermal stability. When the temperature reaches 373 K, its emission intensity still remains at 73.4% of that at room temperature. A 460 nm LED chip and this phosphor are used to fabricate a phosphor-converted light emitting diode (pc-LED) device which can be used as a NIR light source. All these results show the application potential of the as-prepared phosphor in NIR imaging.
Topics & Concepts
InfraredPhysicsGalliumAnalytical Chemistry (journal)CrystallographyMaterials scienceAtomic physicsChemistryOpticsChromatographyMetallurgyLuminescence Properties of Advanced MaterialsGa2O3 and related materialsAdvanced Photocatalysis Techniques