Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test
S. Hayashi, Keiji Wãda
Topics & Concepts
Reliability (semiconductor)Silicon carbideMaterials scienceMOSFETAccelerated agingTransistorElectronic engineeringFast switchingOptoelectronicsElectrical engineeringVoltagePower (physics)EngineeringMetallurgyComposite materialPhysicsQuantum mechanicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design