Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence
Thomas F. K. Weatherley, Wei Liu, Vitaly Osokin, Duncan T. L. Alexander, Robert A. Taylor, Jean-François Carlin, R. Butté, N. Grandjean
Abstract
. Our CL images clearly illustrate the interplay between PDs and carrier dynamics in the well: increasing PD concentration severely limits carrier diffusion lengths, while a higher carrier density suppresses the nonradiative behavior of PDs. The results in this study are readily interpreted directly from CL images and represent a significant advancement in nanoscale PD analysis.
Topics & Concepts
CathodoluminescenceQuantum wellHeterojunctionMaterials scienceNanoscopic scaleOptoelectronicsSemiconductorCrystallographic defectDiffusionCarrier lifetimeOpticsNanotechnologyCondensed matter physicsPhysicsLuminescenceLaserSiliconThermodynamicsGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesSemiconductor materials and devices