N-Doped Graphene and Its Derivatives as Resistive Gas Sensors: An Overview
Ali Mirzaei, Somalapura Prakasha Bharath, Jin‐Young Kim, Krishna K. Pawar, Hyoun Woo Kim, Sang Sub Kim
Abstract
Today, resistance gas sensors which are mainly realized from metal oxides are among the most used sensing devices. However, generally, their sensing temperature is high and other materials with a lower operating temperature can be an alternative to them. Graphene and its derivatives with a 2D structure are among the most encouraging materials for gas-sensing purposes, because a 2D lattice with high surface area can maximize the interaction between the surface and gas, and a small variation in the carrier concentration of graphene can cause a notable modulation of electrical conductivity in graphene. However, they show weak sensing performance in pristine form. Hence, doping, and in particular N doping, can be one of the most promising strategies to enhance the gas-sensing features of graphene-based sensors. Herein, we discuss the gas-sensing properties of N-doped graphene and its derivatives. N doping can induce a band gap inside of graphene, generate defects, and enhance the conductivity of graphene, all factors which are beneficial for sensing studies. Additionally, not only is experimental research reviewed in this review paper, but theoretical works about N-doped graphene are also discussed.