High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz
J.S. Moon, Robert Grabar, Joel Wong, M. Antcliffe, P. Chen, Erdem Arkun, I. Khalaf, A. Corrion, James M. Chappell, Nivedhita Venkatesan, Patrick Fay
Abstract
The authors report on highly scaled 60 nm gate length graded‐channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power density at 30 GHz at Vdd = 14 V. Under two‐tone power measurement, the graded‐channel AlGaN/GaN HEMTs demonstrated similar power performance with peak PAE >70% at 30 GHz. This novel channel design shows great promise for high‐efficiency millimetre‐wave (mmW) power amplifiers up to 3 W/mm RF power density operation.
Topics & Concepts
Materials scienceOptoelectronicsChannel (broadcasting)Power (physics)High-electron-mobility transistorGallium nitrideElectrical engineeringElectronic engineeringTransistorEngineeringVoltageLayer (electronics)PhysicsNanotechnologyQuantum mechanicsGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSilicon Carbide Semiconductor Technologies